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  5. 2156-RFP25N05L
2156-RFP25N05L
2156-RFP25N05L
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2156-RFP25N05L
2156-RFP25N05L
Harris Corporation
N-CHANNEL, MOSFET
Transistors - FETs, MOSFETs - Single
HRISD017-6-103.pdf
10,019
10,019 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
60W (Tc)
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Mfr
Harris Corporation
Package
Bulk
Drain to Source Voltage (Vdss)
50 V
Vgs(th) (Max) @ Id
2V @ 250µA
Rds On (Max) @ Id, Vgs
47mOhm @ 25A, 5V
Series
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Vgs (Max)
±10V
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
FET Feature
-
Mounting Type
Through Hole
FET Type
N-Channel
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
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Shipping
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