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2156-IRFF322
2156-IRFF322
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2156-IRFF322
2156-IRFF322
Harris Corporation
N-CHANNEL POWER MOSFET
Transistors - FETs, MOSFETs - Single
HRISSD67-1.pdf
3,052
3,052 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
Harris Corporation
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
Supplier Device Package
TO-205AF (TO-39)
Series
-
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Package / Case
TO-205AF Metal Can
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Mounting Type
Through Hole
FET Feature
-
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.25A, 10V
Power Dissipation (Max)
20W (Tc)
Vgs (Max)
20V
Package
Bulk
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
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