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  5. 2156-IRF620
2156-IRF620
2156-IRF620
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2156-IRF620
2156-IRF620
Harris Corporation
5.0A 200V 0.800 OHM N-CHANNEL
Transistors - FETs, MOSFETs - Single
HRISSD62-1.pdf
3,012
3,012 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Mounting Type
Through Hole
Base Product Number
IRF6
Rds On (Max) @ Id, Vgs
800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Supplier Device Package
TO-220AB
Package
Bulk
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Package / Case
TO-220-3
Power Dissipation (Max)
70W (Tc)
Series
PowerMESH™ II
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
Mfr
Harris Corporation
Product Status
Active
Technology
MOSFET (Metal Oxide)
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