2156-IRF223|Harris Corporation|Transistors - FETs, MOSFETs - Single

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2156-IRF223

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2156-IRF223

Part Number 2156-IRF223

Manufacturer Harris Corporation

Describe N-CHANNEL POWER MOSFET

Classification: Transistors - FETs, MOSFETs - Single

Datasheet HRISS991-1.pdf

Stock 10,069

Customer Reference

10,069 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

FET Feature

-

FET Type

N-Channel

Vgs (Max)

±20V

Power Dissipation (Max)

40W (Tc)

Mfr

Harris Corporation

Drain to Source Voltage (Vdss)

150 V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.5A, 10V

Package / Case

TO-204AA, TO-3

Series

-

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 25 V

Supplier Device Package

TO-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Package

Bulk

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Product Status

Active

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

4V @ 250µA

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