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  5. 2156-FQP2N80
2156-FQP2N80
2156-FQP2N80
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2156-FQP2N80
2156-FQP2N80
Fairchild Semiconductor
MOSFET N-CH 800V 2.4A TO220-3
Transistors - FETs, MOSFETs - Single
ONSM-S-A0003584912-1.pdf
801
801 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3Ohm @ 1.2A, 10V
Supplier Device Package
TO-220-3
Product Status
Active
Drain to Source Voltage (Vdss)
800 V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
QFET®
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mfr
Fairchild Semiconductor
Vgs (Max)
±30V
Package / Case
TO-220-3
Package
Bulk
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Power Dissipation (Max)
85W (Tc)
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
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