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1N5809
1N5809
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1N5809
1N5809
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL

3,066
3,066 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Operating Temperature - Junction
-65°C ~ 175°C
Product Status
Active
Diode Type
Standard
Mounting Type
Through Hole
Package
Bulk
Capacitance @ Vr, F
60pF @ 10V, 1MHz
Reverse Recovery Time (trr)
30 ns
Package / Case
B, Axial
Base Product Number
1N5809
Voltage - DC Reverse (Vr) (Max)
100 V
Current - Reverse Leakage @ Vr
5 µA @ 100 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If
875 mV @ 4 A
Mfr
Microchip Technology
Series
-
Current - Average Rectified (Io)
3A
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