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1N5712UB
1N5712UB
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1N5712UB
1N5712UB
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
3,022
3,022 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Operating Temperature - Junction
-65°C ~ 150°C
Current - Reverse Leakage @ Vr
150 nA @ 16 V
Product Status
Active
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Series
Military, MIL-PRF-19500/444
Package / Case
4-SMD, No Lead
Voltage - Forward (Vf) (Max) @ If
1 V @ 35 mA
Mounting Type
Surface Mount
Mfr
Microchip Technology
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Package
Bulk
Voltage - DC Reverse (Vr) (Max)
16 V
Supplier Device Package
UB
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