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1727-5886
1727-5886
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1727-5886
1727-5886
Nexperia USA Inc.
MOSFET N-CH 30V 120A I2PAK
Transistors - FETs, MOSFETs - Single
BUK6E2R0-30C.pdf
10,090
10,090 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Mfr
Nexperia USA Inc.
Power Dissipation (Max)
306W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
14964 pF @ 25 V
Series
Automotive, AEC-Q101, TrenchMOS™
Package
Tube
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
229 nC @ 10 V
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