Avalanche Technology family of persistent SRAM memory devices are reluctance random access memory (MRAM) with densities ranging from 1Mbit to 16Mbit. High-performance serial persistent SRAM storage devices support serial Peripheral Interface (SPI) in single (108MHz) and double (54MHz) data rate modes. These P-SRAM storage devices operate in the voltage range of 1.71V to 2V and 2.7V to 3.6V. P-SRAM storage devices are available in small footprint 8-pad WSON, 8-pin SOIC, and 24-ball FBGA packages. These packages are compatible with similar low power volatile and non-volatile products. Series of durable SRAM storage devices are available in the industrial plus operating temperature range of -40°C to 85°C and -40°C to 105°C.

     MRAM technology is similar to Flash technology and is compatible with SRAM read/write timing (persistent SRAM/P-SRAM). This MRAM is a true random access memory, which allows reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without causing large delays. The technology offers low latency, low power consumption, virtually unlimited persistence and retention, and scalable non-volatile storage technology.