Vishay Intertechnology has announced the launch of two new 30 V symmetrical dual-channel N-channel power MosFETs --SiZF5300DT and SiZF5302DT. Combination of high-side and low-side TrenchFET® Gen V MOSFET in a 3.3mm x 3.3mm PowerPAIR® 3x3FS monomer package. Vishay Siliconix SiZF5300DT and SiZF5302DT are suitable for power conversion in computing and communication applications, reducing component count and simplifying design while improving energy efficiency.

     The dual-channel MOSFeTs can be used to replace two PowerPAK 1212 packaged discrete devices, saving 50% substrate space and 63% less space occupancy than the PowerPAIR 6x5F dual-chip MosFeTs. MOSFET provides space saving solutions for USB-C powered laptops, servers, DC cooling fans, and communications device synchronous step-down converters, point-of-load (POL) conversion circuits, and DC/DC module designers. In these applications, the SiZF5302DT high-low edge MosFeTs provide superior results with 50% duty cycle and excellent energy efficiency, especially at 1 A to 4 A current conditions. SiZF5300DT is an ideal solution for 12 A to 15 A heavy loads.

     The SiZF5300DT and SiZF5302DT utilize Vishay's 30 V Gen V technology to achieve excellent on-resistance and gate charge. SiZF5300DT typical conduction resistance under 10 V and 4.5 V respectively 2.02 m  and 2.93 m , SiZF5302DT same conditions on resistance of 2.7 m  and 4.4 m  respectively. Typical gate charges for the 4.5V mosFeTs are 9.5 nC and 6.7 nC, respectively. The ultra-low on-resistance product of gate charge, the MOSFET power conversion application important Value factor (FOM), is 35 percent lower than previous solutions with similar on-resistance. High frequency switch application efficiency increased by 2%, 100 W energy efficiency reached 98%.