Vishay Intertechnology has introduced a new fourth-generation 600V EF series fast body diode MOSFET-SiHK045N60EF in a thin PowerPAK 10 x 12 package. Vishay Siliconix N-channel SiHK045N60EF on-resistance is 29 percent lower than previous generation devices, providing an efficient, high-power density solution for communications, industrial and computing applications, while the gate charge is reduced by 60 percent, resulting in the device on-resistance multiplied by the gate charge. That is, the important value coefficient (FOM) of 600 V MOSFET in power conversion applications is the new low in the start-up world.

     Vishay offers a wealth of MOSFET technologies to support all levels of power conversion, from high voltage input to low voltage output. With the introduction of the SiHK045N60EF and other fourth-generation 600 V EF series devices, Vishay meets the requirements for improved energy efficiency and power density at the first two stages of the power system architecture -- including the Totem pole bridless power factor correction (PFC) and subsequent DC/DC converter modules. Typical applications include edge computing and data storage, uninterruptible power supplies, high-intensity discharge (HID) lamps and fluorescent ballast lighting, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.

     The SiHK045N60EF is based on Vishay's energy efficient E-Series superjunction technology with a typical on-off resistance of only 0.045Ω at 10 V, which is 27% lower than PowerPAK 8 x 8 packaged devices, resulting in increased power rating and support for a variety of applications greater than or equal to 3 kW with device height as low as 2.3 mm. Increased power density. In addition, the ultra-low gate charge of the MOSFET drops to 70 nC. The device's FOM is 3.15 Ω*nC, 2.27 % lower than the closest MOSFET competitor in the class. These parameters indicate reduced on-off and on-off losses, thus saving energy and improving efficiency. The device meets the special requirements of titanium efficiency for server power supply or 98% peak efficiency for communication power supply.

     The effective output capacitors Co(er) and Co(tr) of SiHK045N60EF are only 171 pf and 1069 pF respectively, which improves switching performance of ZVS topologies such as LLC resonant converters. The Co(tr) of the device was 8.79 % lower than that of the closest MOSFET competitor in the class, while the Qrr of its fast-body diode was as low as 0.8 μC, helping to improve the reliability of the bridge topology. In addition, the PowerPAK 10 x 12 encapsulation of MOSFET has any surface-mount excellent thermal performance, maximum junction - shell heat resistance rating of 0.45  C/W. The SiHK045N60EF thermal impedance is 31% lower than the PowerPAK 8 x 8 package.The recently released MosFeTs comply with RoHS and Vishay Green standards, are halogen-free, withstand avalanche mode overvoltage transients, and guarantee 100% UIS compliance with the maximum limit.