Nexperia announced the addition of PESD4V0Y1BBSF and PESD4V0X2UM very low clamp voltage ESD protection diodes to the Nexperia TrEOS portfolio. These devices combine high surge tolerance, very low trigger voltage and very low clamp voltage with wide passband, outstanding surge immunity and outstanding IEC61000-4-5 surge rating.

     Stefan Seider, Senior Product Manager at Nexperia, said: "Nexperia has developed the TrEOS portfolio specifically designed to provide our customers with a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Thunderbolt™, HDMI 2.1 and universal flash memory. The fast switching speeds of PESD4V0Y1BBSF and PESD4V0X2UM provide extremely effective ESD peak suppression for high speed data lines, while their low trigger voltage helps to significantly reduce the energy contained in the IEC61000-4-5 8/20 µs surge pulse."

     The single-data line PESD4V0Y1BBSF is packaged in A low-inductive DSN0603-2 package with a 6.3V TLP trigger voltage and typical device robustness and capacitance of 25 A 8/20 µs and 0.7 pF, respectively. The clamp voltage provided by PESD4V0Y1BBSF is only 2.4V at 16 A 100 ns TLP and 3.4V at 20 A 8/20 µs surge. The dual data line PESD4V0X2UM is packaged in A compact DFN1006-3 package with a trigger voltage of 8 V, typical device robustness of over 14 A 8/20 µs, and typical device capacitance of 0.82 pF.

     While both devices provide excellent protection for USB2.0 D+/D- lines, the PESD4V0Y1BBSF's S21 has a passband of over 7.5GHz and is therefore suitable for USB3.x at 5 Gbps. Both devices provide a high level of surge resistance with the superior IEC61000-4-5 surge rating.