Stmicroelectronics's new two-channel electrically isolated IGBTs and silicon carbide (SiC) MOSFET gate drivers save space and simplify circuit design for high-voltage power conversion and industrial applications. The IGBT driver STGAP2HD and the SiC MOSFET driver STGAP2SICD utilize stmicroelectronics' latest electrical isolation technology in an SO 36W wide-body package capable of tolerating transient voltages of up to 6kV. In addition, the transient tolerance of ±100V/ns dv/dt prevents stray conduction under high electrical noise conditions. Both drivers offer up to 4A grid control signals, and dual output pins give more flexibility to the grid drive, enabling separate on and off times. The active Miller clamp function prevents spikes in grid voltage during rapid commutation in the half-bridge topology.


     Circuit protection features include overheat protection, safe operation watchdog, and an undervoltage lock (UVLO) mechanism in each channel to prevent the drive from starting in dangerously inefficient mode. According to the technical requirements of SiC MOSFET, STGAP2SICD increases the threshold voltage of UVLO to optimize the energy efficiency of the transistor.


     Each device has an iLOCK pin that opens two channels simultaneously in double-low-edge asymmetric half-bridge applications and an interlock protection mechanism that prevents straight-through current in conventional half-bridge circuits. Both drivers have a rated voltage of 1200V on the high voltage rail, input to output propagation time of 75ns, and high precision PWM control.


     Stmicro's new two-channel current isolated grid driver features dedicated off and brake pins, as well as stand-by power saving pins for targeted applications including power supplies, motors, converters, welders and chargers. In addition, input pins are compatible with minimum 3.3V TTL and CMOS logic signals to simplify the driver's connection to the main microcontroller or DSP processor.