Toshiba Electronic Components and Memory Corporation has begun mass production of the press-mounted injection-enhanced gate transistor (IEGT) "ST2000GXH32" using the groove type IEGT chip and the newly developed high speed diode chip for high voltage converters. This product has A collector-emitter voltage rating of 4500 V and collector current (DC) rating of 2000 A.

     The cathode structure of diode can suppress voltage oscillation during reverse recovery and improve the tolerance of reverse recovery. The newly developed voltage blocking structure achieves high temperature voltage resistance. Compared with existing Toshiba products [1], the new ST2000GXH32 suppresses voltage oscillations at small reverse recovery currents. This allows the use of a small grid drive resistance (RG(on)) and reduces the on-switch loss [2][3] (E on) from 12.0J to 8.4J (typical value) by approximately 30%.

     In addition, the improved cathode increased peak power during reverse recovery by approximately 29 percent. In addition, the junction temperature rating (T j) of the ST2000GXH32 was increased from 125 °C to 150 °C (maximum) by improving the diode's high temperature tolerance. ST2000GXH32 helps to miniaturize and save energy for high-voltage industrial equipment such as DC transmission, static reactive compensator, motor driven inverter and converter.