Onsemi released the new 600 V SUPERFET VMOSFET series. These high-performance devices enable the power supply to meet stringent energy efficiency requirements, such as the 80 PLUS Titanium, especially under challenging 10% load conditions. The three product groups under the 600 V SUPERFET family FAST, Easy Drive, and FRFET are optimized to provide class leading performance in a variety of applications and topologies.

     The 600 V SUPERFET V series provides excellent switching characteristics and low gate noise resulting in reduced electromagnetic interference (EMI), which is a significant benefit to servers and telecommunications systems. In addition, strong body diodes and higher VGSS (DC ±30 V) enhance system reliability.

     Asif Jakwani, senior vice president and general manager, Advanced Power Division, ON, said, "With the goal of addressing climate change, 80 Plus Titanium requires server and data storage hardware to achieve 90 percent power efficiency at 10 percent load and 96 percent energy efficiency at 50 percent load. FAST, Easy Drive and FRFET versions of our SUPERFET V series are meeting these requirements, providing robust solutions that ensure continued system reliability."

     The FAST version delivers extremely high energy efficiency in hard switching topologies such as high-end PFCS and is optimized to deliver lower gate charge (Qg) and EOSS losses for fast switching. Initial devices for this version include the NTNL041N60S5H (41mΩ RDS(on)) and NTHL185N60S5H (185mΩ RDS(on)), both in the TO-247 package. The NTP185N60S5H is packaged in a TO-220 package, while the NTMT185N60S5H is packaged in a Power88 package of 8.0mm x 8.0mm x 1.0mm TO ensure humidity sensitivity of MSL 1 and has Kelvin source architecture to improve gate noise and switching loss.

     The Easy Drive version works with hard and soft switching topologies and includes a built-in gate resistor (Rg) and optimized built-in capacitors. They are suitable for general use in many applications, including PFCS and LLCS. In these devices, the built-in Zener diode between the gate and source has a RDS(on) of more than 120 Mω, resulting in less stress on the gate oxide and higher ESD durability, resulting in higher package yield and lower defect rates. The two devices currently available, NTHL099N60S5 and NTHL120N60S5Z, have RDS(on) of 99mΩ and 120 mΩ, both in the TO-247 package.

     The Quick Recovery (FRFET) version is suitable for soft switch topologies such as phase shift Full Bridge (PSFB) and LLC. They have the advantage of fast body diodes and offer reduced Qrr and Trr. Strong diode durability ensures higher system reliability. The NTP125N60S5FZ with built-in Zener diode has a RDS(on) of 125 mΩ in a TO-220 package, while the NTMT061N60S5F has a RDS(on) of 61 mΩ in a Power88 package. The lowest loss device is NTHL019N60S5F, RDS(on) only 19 Mω, in TO-247 package.