The Texas Instruments DRV8300 three-phase Gate driver offers three half-bridge gate drivers, each capable of driving both a high - and low-side n-channel power mosfet. The DRV8300D uses an integrated guide diode and an external capacitor to generate the correct gate drive voltage for a high-side mosfet. The DRV8300N generates the correct gate drive voltage using an external guide diode and an external capacitor for a high-side mosfet. GVDD is used to generate a gate drive voltage for a low-side mosfet. Texas Instruments' DRV8300 gate drive architecture supports sources with peaks up to 750mA and 1.5A sink current.

     Phase pin SHx can tolerate significant negative voltage transients, while high side-gate driver supplies BSTx and GHx can support higher positive voltage transients (115V) abs maximum voltages. This improves the robustness of the system. The smaller propagation delay and delay matching specifications minimize dead-time requirements, further improving efficiency. With GVDD and BST undervoltage locking, undervoltage protection is provided on both low and high sides.