Ampleon announced the launch of two new wideband silicon based Gallium nitride (GaN-on-SiC) high electron mobility transistors (HEMT) with power ratings of 30W for the CLF3H0060(S)-30 and 100W for the CLF3H0035(S)-100. These two high linearity devices are the first products of our recently certified 3rd generation GaN-SiC HEMT process.


     These devices provide wideband high linearity at low bias, thereby increasing the level of wideband linearity (third-order intermodulation below -32dBc at 5dB; It is less than -42 DBC at the 2:1 bandwidth when backing back 8dB from saturation power). Broadband linearity is critical for frequently-agile radios deployed in today's defense electronics, which are used to handle multimode communication waveforms (from FM signals all the way up to higher-order QAM signals) while simultaneously applying adversarial channels. These demanding applications require the transistor itself to have better broadband linearity. Based on market feedback, Efulon Semiconductor's 3rd generation GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.

     In addition, both Generation 3 transistors are packaged with enhanced heat dissipation for reliable operation and provide an extremely durable VSWR tolerance of up to 15 to 1 for 30W devices. This durability can also be extended to Class A amplifier operating mode. This is common in the application of instruments with saturated gate conditions while maintaining linearity over a wide dynamic range over an extended frequency range. The 3rd generation GAN-on-SIC HEMT transistor from Efulon Semiconductor sets a new standard for high-linear GaN technology for broadband applications, while maintaining excellent heat dissipation and durability.