Vishay Intertechnology has announced the launch of the latest fourth generation 600V E-series MOSFET, SiHK045N60E. The Vishay Siliconix N-channel SiHK045N60E on-resistance is 27 percent lower than the previous generation 600 V E-series MOSFETs, providing an efficient solution for communications, server and data center power applications while achieving a 60 percent reduction in gate charge. Thus, the product of gate charge and on-resistance reaches the advanced level in the industry among similar devices. This parameter is the key index (FOM) of 600 V MOSFET in power conversion applications.


     Vishay's extensive MOSFET technology fully supports the power conversion process, covering a variety of new electronic systems requiring high voltage input to low voltage output. With the introduction of the SiHK045N60E and the upcoming release of the fourth generation 600 V E series, the company is able to meet the requirements for improved energy efficiency and power density at the beginning of the design of the power system architecture - including power factor correction and hard switching AC/DC converter topologies.


     SiHK045N60E uses Vishay's latest energy efficient E-series super junction technology. The typical on-off resistance at 10 Vis only 0.043 Ω, and the ultra-low gate charge drops to 65 nC. The FOM of the device is 2.8 Ω*nC, 3.4 % lower than that of similar rival MOSFET devices. The effective output capacitor Co(er) of SiHK045N60E is 117 pF, which helps to improve the switching performance. These performance parameters mean reduced conduction and switching losses, resulting in energy savings. SiHK045N60E shell thermal resistance RthJC is 0.45C /W, 11.8% lower than the close competitor devices, with more excellent thermal performance.


     The device is packaged in a PowerPAK 10x12 ROHS-compliant, halogen-free package that withholds overvoltage transients in avalanche mode with a guaranteed 100% UIS test limit.