STMicroelectronics STPOWER MDmesh M9 and DM9 silicon-based N-channel overjunction multi-drain power MOSFET transistors are ideal for designing switching power supplies (SMPS) for data center servers, 5G infrastructure, and flat-panel television sets.

     The first two devices to hit the market are the 650V STP65N045M9 and 600V STP60N043DM9. Both products have very low on-area resistance (RDS(on), which greatly increases power density and helps reduce system size. The maximum on-going resistance (RDS(on)max) of both products is at the leading level of the same kind. STP65N045M9 is 45mΩ and STP60N043DM9 is 43mΩ. Because the gate charge (Qg) is very low, typically 80nC at 400V drain voltage, both devices feature the best-in-class RDS(on)max x Qg quality factor (FoM) currently on the market.

     Typical gate threshold voltage (VGS(th)) of STP65N045M9 is 3.7V and typical value of STP60N043DM9 is 4.0V. Compared with MDmesh M5 and M6/DM6 of the previous generation, the on-off switch loss can be greatly reduced. The MDmesh M9 and DM9 families also have very low reverse recovery charge (Qrr) and reverse recovery time (trr), which further improves energy efficiency and switching performance.

     Another feature of STMicro's latest high voltage MDmesh technology is the addition of a platinum diffusion process that ensures fast switching of the intrinsic diode. The peak value of the diode recovery slope (dv/dt) is higher than that of the earlier process. The full range of MDmesh DM9 products has very high robustness and can withstand dv/dt slopes up to 120V/ns at 400V voltages.The new MDmesh M9 and DM9 products from STMicroelectronics, STP65N045M9 and STP60N043DM9, are packaged in TO-220 power