Toshiba Electronic Components and Memory Devices Inc. announced the launch of a 150V n-channel power MOSFET- "TPH9R00CQH". The device adopts the latest generation "U-MOSX-H" process, suitable for industrial equipment switching power supply, including data center power supply and communication base station power supply.

     Compared with the 150V product TPH1500CNH using the current generation "U-MOSⅧ-H" process, the drain-to-source on-resistance of TPH9R00CQH is reduced by about 42%. The structural optimization of the new MOSFET promotes the balance between the source-leak-on-resistance and the two charge characteristics, thus achieving excellent low loss characteristics. In addition, the peak voltage between the drain and source is reduced during switching operation, helping to reduce electromagnetic interference (EMI) from the switching power supply. The product is available in both the SOP Advance and the more widely adopted SOP Advance (N) surface mount packages.

     At the same time, Toshiba also provides various tools to support the circuit design of switching power supply. In addition to the G0 SPICE model, which can quickly verify circuit function, a high-precision G2 SPICE model that can accurately reproduce transient characteristics is now available.

     Toshiba will further expand its MOSFET product line to help reduce power consumption by reducing losses and improving the power efficiency of devices.