Infineon Technologies has announced the launch of the new EDT2 IGBT in the TO247PLUS package. The device is optimized specifically for vertical automotive traction inverters, further enriching the Infineon vehicle gauge level vertical high voltage device product lineup. Thanks to its outstanding quality, the EDT2 IGBT meets and surpasses the vehiclescale stress testing standard AECQ101 for semiconductor discrete devices, thus significantly improving the performance and reliability of inverter systems. The IGBT is designed with auto-class micro-groove field abort unit, and the technology used has been successfully applied to EasyPACK 2B EDT2 and HybridPACK™ inverter modules.

     In order to meet the requirements of target applications, Infineon's new EDT2 IGBT product series has excellent short-circuit resistance. In addition, its TO247PLUS package has a larger creepage distance, which is more conducive to system design. At the same time, the EDT2 technology is specially optimized for the traction inverter. The breakdown voltage is 750 V, which can support battery voltage up to 470 VDC, and significantly reduce switching and conduction losses.
 
     When the split EDT2 IGBT operates at a temperature of 100 ° C, the rated current is usually 120 A or 200 A. Both models have extremely low forward voltage. Compared with the previous generation, the conduction loss is reduced by 13%. Among them, the AIKQ200N75CP2 with a rated current of 200A is outstanding among the separated IGBT products packaged with TO247Plus. Therefore, only a small number of parallel devices are needed to achieve the set target power level, while improving the power density and reducing the system cost.

     In addition, the parameter distribution of EDT2 IGBT is very compact. The difference between the typical value of collector emitter saturation voltage (Vce (sat)) and the maximum value is less than 200 mV, and the difference between the gate threshold voltage (VGEth) is less than 750 mV. The saturation voltage is a positive temperature coefficient. In conclusion, these features help to easily realize parallel operation, thus improving the system flexibility and power scalability of the final design. In addition, this IGBT device also has the advantages of stable switching characteristics, low gate charge (QG) and 175 ° C maximum junction temperature (Tvjop).