Ampleon announced the launch of two new types of broadband silicon carbide based gallium nitride (GaN on SiC) high electron mobility transistors (HEMTs) with power levels of 30W CLF3H0060 (S) - 30 and 100W CLF3H0035 (S) - 100 respectively. These two high linearity devices are the first products of the third generation GaN SiC HEMT process that we have recently passed certification and put into production.

     These devices provide broadband high linearity characteristics under low offset, thus improving the broadband linearity level (the third-order intermodulation is lower than - 32dBc at 5dB; it is lower than - 42dBc at 2:1 bandwidth when 8dB back from saturated power). Broadband linearity is crucial for the frequency agile radio deployed in today's national defense electronic equipment, which is used to process multimode communication waveforms (from FM signals to high-order QAM signals) and simultaneously apply countermeasures to channels. These demanding applications require that transistors themselves have better broadband linearity. According to the market feedback, the third generation GaN on SiC HEMT transistors of Averon Semiconductor can meet these extended broadband linearity requirements.

     In addition, these two third-generation transistors also use enhanced heat dissipation packages for reliable operation and provide up to 15:1 extremely durable VSWR tolerance for 30W devices. This durability can also be extended to Class A amplifier operating modes. This is very common in instrument applications where the saturation grid is present and linearity is maintained in a wide dynamic range over a wide frequency range. The third generation GaN on SiC HEMT transistors of Averon Semiconductor set a new standard for high linear GaN technology for broadband applications, while maintaining excellent heat dissipation and durability.