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  5. IXTU1R4N60P
IXTU1R4N60P
IXTU1R4N60P
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IXTU1R4N60P
IXTU1R4N60P
IXYS
MOSFET N-CH 600V 1.4A TO251
Transistors - FETs, MOSFETs - Single
IXT(P,U,Y)-1R4N60P.pdf
20,040
20,040 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Obsolete
Vgs(th) (Max) @ Id
5.5V @ 25µA
Series
PolarHV™
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
9Ohm @ 700mA, 10V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Drain to Source Voltage (Vdss)
600 V
FET Type
N-Channel
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
IXYS
Supplier Device Package
TO-251AA
FET Feature
-
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