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Small, thin MOSFET gate driver ics are better suited for miniaturization applications
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Electrical power distribution, power-on sequencing and power state transition all need load switch, which can reduce the leakage current in standby mode, inhibit the surge current, and realize power off control. The function of the load switch is to turn the power rail on and off. Most load switches contain four pins: input voltage pin, output voltage pin, enable pin and ground pin. When enabling the device through the ON pin, the on-FET is switched on, thus allowing the current to flow from the input pin to the output pin, transferring electrical energy to the downstream circuit.
 
Toshiba's MOSFET grid-driven IC (IC) TCK421G for 20V power lines is one such load switch, the first in the TCK42xG family. This family of devices is specifically designed to control the gate voltage (based on input voltage) of an external n-channel MOSFET while providing overvoltage locking.
 
(1) Analysis of device functions and characteristics
 
The TCK421G MOSFET gate driver IC is used in conjunction with an external n-channel MOSFET connected back to back for use in power multiplexer circuits configured with reverse current blocking or load switch circuits equipped with reverse current blocking. Its built-in charge pump circuit supports a wide voltage input range of 2.7V to 28V, and can provide a stable voltage to the grid-source voltage of the external mosFETs through intermittent operation mode, thus realizing high current switching.
 
The biggest highlight of TCK421G is that there is a protection circuit between the grid source, which is also a necessary protection function to achieve high current switching. The product supports both 5.6V and 10V gate output voltages to match different voltages of external mosFETs. Both the overvoltage lock voltage and the gate output voltage can be selected according to the user's equipment requirements. Toshiba will continue to develop the TCK42xG series in the future, with plans to release a total of six versions that support input overvoltage locking from 5V to 24V. In addition to a variety of overvoltage and undervoltage locking functions, its standby current is less than 1µA.
 
                                 
 
(2) electrical characteristics analysis
 
TCK421G uses WCSP6G package, one of the smallest packages in the industry, to achieve a small and thin design (1.2mm×0.8mm (typical value), the thickness is only 0.35mm (maximum), so it is suitable for all kinds of small equipment power management circuit, easy to achieve high density mounting, thereby reducing the size of the equipment.
 
The main features of TCK421G are as follows:
● Grid driver IC for N channel common drain MOSFET
● Grid driver IC for N channel single high-end MOSFETs
● Maximum input voltage: VIN max = 40V
● Wide input voltage operation: VIN = 2.7V to 28V
● Grid - source protection circuit
● Over voltage lock: VIN_OVLO = 6.31V, 10.83V, 14.29V, 23.26V and 27.73V typical values
● Undervoltage lock: VIN_UVLO = 2.0V typical value
● Built-in charge pump circuit: grid - source voltage VGS = 5.6V and 10V typical values
● Low standby current: when VIN = 12V, IQ(OFF) = 0.9µA maximum (except TCK424G and TCK425G)
● 6 pin surface mount, Width × length × height (mm) 1.2×0.8×0.35, weight 0.61mg (typical value)
 
(3)Product application direction
 
TCK421G has been widely applied in the market, including wearable devices, smart phones, laptops, tablets, IoT devices, storage devices, USB power supplies and general power supplies. All kinds of mobile devices need power management and overvoltage protection functions. Since these devices are relatively small and use battery power, they have strict requirements on standby current and size of devices. TCK421G and TCK42xG series planned to be launched in the future can perfectly match the above requirements.
                          
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